Material |
Crystalline |
Multi-Crystalline |
---|---|---|
Electrical |
Type/Dopant |
P/Boron |
Lifetime |
≧ 1 μsec |
|
Resistivity |
1.0 ~ 3.0 Ohm.cm |
|
Geometry |
Dimension |
156 ± 0.5 x 156 ± 0.5mm |
Rectangular Angle |
90 ± 0.3 ° |
|
Bevel Edge Length |
0.5 ~ 2 mm |
|
Bevel Edge Angle |
45 ± 10 ° |
|
Thickness |
200 ± 20 μm |
|
TTV |
≦ 30 μm |
|
Appearance |
Edge Defect |
No V-type sharp chip |
Q'ty of Rounded chips ≦ 1 |
||
Depth≦0.5mm, Length≦0.5mm |
||
Saw Mark |
Rt ≦ 15μm |
|
Bow |
≦ 50 μm |
|
Wafer Surface |
No cracks and pin holes |
|
Chemical |
Carbon Conc. |
1.0e18 atoms/cm3 |
Oxygen Conc. |
8.0e17 atoms/cm3 |
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